n-channel power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab l semelab l semelab l semelab limited imited imited imited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9118 issue 1 page 1 of 3 irf450 hermeticaly sealed to-3 metal package simple drive requirements screening options available absolute maximum ratings (t c = 25c unless otherwise stated) vds drain ? source voltage 500v v gs gate ? source voltage 20v i d continuous drain current t c = 25c 13a i d continuous drain current t c = 100c 8a i dm pulsed drain current (2) 52a p d total power dissipation at t c = 25c 150w derate above 25c 1.2w/c t j junction temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters max. units r jc thermal resistance, junction to case 0.83 r ja thermal resistance, junction to ambient 30 c/w internal package inductance symbols parameters typ. units l d internal drain inductance 5 l s internal source inductance 13 nh notes notes notes notes (1) pulse width 300us, 2% (2) repetitive rating: pulse width limited by max. junction temperature.
n-channel power moset irf450 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9118 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs = 0 i d = 250 a 500 v r ds(on) (1) static drain-source on-state resistance v gs = 10v i d = 7a 0.4 v gs(th) gate threshold voltage v ds = v gs i d = 250a 2 4 v g fs (1) forward transconductance v ds 15v i d = 7a 6 s( ? ) v ds = 500v v gs = 0 250 i dss zero gate voltage drain current v ds = 400v t c = 125c 1000 a i gss forward gate-source leakage v gs = 20v 100 i gss reverse gate-source leakage v gs = -20v -100 na dynamic characteristics c iss input capacitance v gs = 0 2700 c oss output capacitance v ds = 25v 600 c rss reverse transfer capacitance f = 1.0mhz 240 pf q g total gate charge v gs = 10v 82 q gs gate-source charge i d = 16a 40 q gd gate-drain charge v ds = 0.8 bv dss 42 nc t d(on) turn-on delay time 35 t r rise time 190 t d(off) turn-off delay time 170 t f fall time v dd = 250v i d = 12a r g = 2.35 130 ns source-drain diode characteristics i s continuous source current 13 i sm (1) pulse source current 52 a i s = 13a t j = 25c v sd (1) diode forward voltage v gs = 0 1.4 v t rr reverse recovery time i s = 13a t j = 150c 1300 ns q rr (1) reverse recovery charge v dd 50v di/dt = 100a/s 7.4 c
n-channel power moset irf450 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9118 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) 1 2 3 (case) 25.15 (0.99)26.67 (1.05) 10.67 (0.42)11.18 (0.44) 38 . 61 ( 1 . 52 ) 39 . 12 ( 1 . 54 ) 29 . 9 ( 1 . 177 ) 30 . 4 ( 1 . 197 ) 16 . 64 ( 0 . 655 ) 17 . 15 ( 0 . 675 ) 3.84 (0.151)4.09 (0.161) 0 . 97 ( 0 . 060 ) 1 . 10 ( 0 . 043 ) 7.92 (0.312)12.70 (0.50) 22 . 23 ( 0 . 875 ) m a x . 6.35 (0.25)9.15 (0.36) 1.52 (0.06) 3.43 (0.135) to3 (to204 - aa) pin 1 - gate pin 2 - source case - drain
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